Photosensing transistor for optical touch screen device and method of manufacturing the photosensing transistor

摘要

A photosensing transistor (100) for optical touch screens includes a gate layer (110), a gate insulation layer (120) on the gate layer, a channel layer (130) on the gate insulation layer, an etch stop layer (140) on a partial area of the channel layer (130), a source (150) and a drain (160) on the channel layer (130) and separated from each other with the etch stop layer (140) being interposed between the source (150) and the drain (160), and a passivation layer (170) covering the source(150), the drain (160), and the etch stop layer (140), wherein the source (150) is separated from the etch stop layer (140). The disclosed transistor structure has an improved efficiency in sensing incident light and increases an area of the channel layer (130) to be exposed to the incident light. A manufacturing method for the photosensing transistor (100) is also disclosed.