| 发明名称 |
PEROVSKITE MANGANESE OXIDE THIN FILM |
| 摘要 |
<p>An object of the present invention is to elevate the transition temperature of a perovskite manganese oxide thin film above that of the bulk. One aspect of the present invention provides a perovskite manganese oxide thin film 2 formed on a substrate 1 and having an (m10) orientation (19 ‰¥ m ‰¥ 2).</p> |
| 申请公布号 |
EP2650407(B1) |
申请公布日期 |
2015.07.29 |
| 申请号 |
EP20110847026 |
申请日期 |
2011.11.28 |
| 申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
OGIMOTO, YASUSHI |
| 分类号 |
C30B29/22;C01G45/00;H01L21/8246;H01L27/105;H01L43/08;H01L45/00;H01L49/00 |
主分类号 |
C30B29/22 |
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