发明名称 |
Forming structures that include a relaxed or pseudo-relaxed layer on a substrate |
摘要 |
The invention relates to methods of forming a relaxed or pseudo-relaxed layer on a substrate, wherein the relaxed layer may be a semiconductor material. An implementation of the method includes growing an elastically stressed semiconductor material layer on a donor substrate, forming a glassy layer of a viscous material and bonding it to the stressed layer, removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate, and then heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer. The glassy layer can also be bonded to a receiving substrate so that the structure can be transferred thereto. Implementations also relate to structures obtained from the method.
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申请公布号 |
US2004195656(A1) |
申请公布日期 |
2004.10.07 |
申请号 |
US20040784016 |
申请日期 |
2004.02.20 |
申请人 |
GHYSELEN BRUNO;MAZURE CARLOS;ARENE EMMANUEL |
发明人 |
GHYSELEN BRUNO;MAZURE CARLOS;ARENE EMMANUEL |
分类号 |
H01L21/20;H01L21/324;H01L21/762;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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