Sense amplifier circuit capable of determining amplification factor of cell current based on operation cycles

摘要

A sense amplifier circuit may be used for read operation of a non-volatile memory. The sense amplifier circuit includes of a first pre-charge circuit, a second pre-charge circuit, a bias circuit, an enable circuit, a current mirror, a first comparator, a second comparator, a buffer and a counter. The current mirror is able to amplify a cell current of a memory cell to prevent error and shorten or maintain access time as erase count of the memory cell increases.

主权项

1. A sense amplifier circuit, comprising:
a reference circuit configured to generate a reference voltage according to a reference current; a first pre-charge circuit configured to generate a charge voltage greater than the reference voltage; a second pre-charge circuit configured to generate a cell current; a current mirror coupled to the first pre-charge circuit having a switch used to control amplification of the cell current according to a control signal to generate an amplified cell current; an enable circuit coupled to the second pre-charge circuit and configured to enable the current mirror; a first comparator coupled to the current mirror and configured to compare the reference voltage and a new charge voltage generated according to the amplified cell current and the charge voltage to generate a comparison result; and a buffer configured to generate a sense amplifier output according to the comparison result.