发明名称 Graphene defect detection
摘要 Technologies are generally described for a method and system configured effective to detect a defect in a sample including graphene. An example method may include receiving a sample, where the sample may include at least some graphene and at least some defects in the graphene. The method may further include exposing the sample to a gas under sufficient reaction conditions to produce a marked sample, where the marked sample may include marks bonded to at least some of the defects. The method may further include placing the marked sample in a detector system. The method may also include detecting at least some of the marks with the detector system.
申请公布号 US9091634(B2) 申请公布日期 2015.07.28
申请号 US201113496064 申请日期 2011.09.16
申请人 Empire Technology Development LLC 发明人 Miller Seth A.
分类号 G01N31/00;G01N23/223;B82Y30/00;B82Y35/00 主分类号 G01N31/00
代理机构 Moritt Hock & Hamroff LLP 代理人 Moritt Hock & Hamroff LLP ;Rubin, Esq. Steven S.
主权项 1. A method for detecting a defect in a sample, wherein the sample includes graphene, the method comprising: receiving a sample, wherein the sample includes at least some graphene and at least some defects in the graphene; exposing the sample to a gas under sufficient reaction conditions to produce a marked sample, wherein the gas includes molecules and the molecules include at least one atom of Selenium (Se), Tellurium (Te), Tin (Sn), Bromine (Br), Hafnium (Hf), or Iodine (I), and the marked sample includes marks bonded to at least some of the defects in the graphene; at least partially removing the gas from the marked sample; placing the marked sample in a detector system; and detecting the defect by detecting at least some of the marks bonded to defects in the marked sample with the detector system.
地址 Wilmington DE US