发明名称 |
METHOD AND APPARATUS FOR MANUFACTURING MONOCRYSTALLINE INGOT |
摘要 |
<p>According to an embodiment of the present invention, a single crystal ingot manufacturing method is executed by a single crystal ingot manufacturing apparatus which includes a crucible storing the melt and a water-cooling pipe cooling a single crystal ingot grown in the melt. The method includes a step of exponentially increasing the ratio of the pulling rate of the single crystal ingot to the temperature different of the single crystal ingot in the radial direction in proportion to the pulling rate while the single crystal ingot is grown.</p> |
申请公布号 |
KR20150086009(A) |
申请公布日期 |
2015.07.27 |
申请号 |
KR20140006083 |
申请日期 |
2014.01.17 |
申请人 |
LG SILTRON INCORPORATED |
发明人 |
CHOI, YOUNG KYU;LEE, HONG WOO;SIM, BOK CHEOL |
分类号 |
C30B15/20;C30B15/30;C30B29/06 |
主分类号 |
C30B15/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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