发明名称 METHOD AND APPARATUS FOR MANUFACTURING MONOCRYSTALLINE INGOT
摘要 <p>According to an embodiment of the present invention, a single crystal ingot manufacturing method is executed by a single crystal ingot manufacturing apparatus which includes a crucible storing the melt and a water-cooling pipe cooling a single crystal ingot grown in the melt. The method includes a step of exponentially increasing the ratio of the pulling rate of the single crystal ingot to the temperature different of the single crystal ingot in the radial direction in proportion to the pulling rate while the single crystal ingot is grown.</p>
申请公布号 KR20150086009(A) 申请公布日期 2015.07.27
申请号 KR20140006083 申请日期 2014.01.17
申请人 LG SILTRON INCORPORATED 发明人 CHOI, YOUNG KYU;LEE, HONG WOO;SIM, BOK CHEOL
分类号 C30B15/20;C30B15/30;C30B29/06 主分类号 C30B15/20
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