| 摘要 |
A temperature-sensitive resistor structure (342) of a micro-flow sensor (310), comprising a silicon base (3421) provided with an airflow window (3429); a thin-film resistor (3423) comprising chip resistors located at the entity part of the silicon base (3421) and a plurality of strip resistors uniformly arranged at intervals in parallel, which are suspended at the part of the airflow window (3429), wherein the chip resistors and the plurality of strip resistors are connected in series; and a suspension beam (3422) which is used for connecting the thin-film resistor (3423) and the silicon base (3421) and supporting the thin-film resistor (3423), wherein the suspension beam (3422) is made of a silicon nitride material. Also provided are a manufacturing method for a temperature-sensitive resistor structure (342), a micro-flow sensor (310) using the temperature-sensitive resistor structure (342), and an infrared gas concentration meter based on the micro-flow sensor (310). The micro-flow sensor (310) using the temperature-sensitive resistor structure (342) has relatively high detection accuracy, and can be used for gas concentration detection based on an NDIR. |
