| 摘要 |
A projection exposure apparatus for projecting a pattern of a mask, illuminated with exposure light, onto a substrate through a projection optical system, is disclosed wherein a wavelength changing device for changing the wavelength of exposure light is provided to reduce a change in optical characteristic of the projection optical system due to a change in atmospheric pressure, wherein the projection optical system has plural refractive optical elements made by use of two or more glass materials, wherein interspaces of refractive optical elements are filled with gaseous fluids of a pressure the same as or substantially the same as atmospheric pressure, and wherein a gaseous fluid in at least one interspace differs in refractive index from a gaseous fluid in at least one of the remaining interspaces.
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