| 摘要 |
<p>The purpose of the present invention is to provide a wafer processing method capable of forming a chip having a relatively large thickness without deteriorating flexure strength. According to the present invention, a method for processing a wafer wherein a plurality of crossing lines to be divided are set comprises: a groove forming step of forming a plurality of grooves having a depth that does not reach a finish thickness along a line to be divided from the surface of a wafer; a protective tape adhering step of adhering protective tape to the surface of the wafer; a laser processing step of locating a light converging point of a laser beam with a wavelength transmitted through the wafer in the back side than the finish thickness inside the wafer, irradiating the laser beam toward the back side of the wafer along the line to be divided, thereby forming a modified layer along the line to be divided inside the wafer and forming a crack layer along the line to be divided which is extended toward the groove from the modified layer; and a grinding step of removing the modified layer by thinning as the finish thickness by grinding the back side of the wafer with a grinding means, and dividing the wafer into a chip along the line to be divided.</p> |
