COMPONENT OF SUBSTRATE PROCESSING APPARATUS AND METHOD FOR FORMING A FILM THEREON

摘要

A component of a substrate processing apparatus that performs plasma processing on a substrate includes a base mainly formed of an aluminum alloy containing silicon. A film is formed on the surface of the base by an anodic oxidation process which includes connecting the component to an anode of a power supply and immersing the component in a solution mainly formed of an organic acid. The film is impregnated with ethyl silicate.

主权项

1. A method for forming a film on a component for use in a substrate processing apparatus that performs plasma processing on a substrate, the method comprising:
providing the component having a base mainly formed of a silicon-containing aluminum alloy; forming on the base an alumite film having a plurality of pores by performing an anodic oxidizing process which includes immersing the base in a solution mainly formed of an organic acid; impregnating ethyl silicate into the pores without sealing the pores, wherein silicon in the ethyl silicate is dispersed into the alumite film and remains therein as silicon granules, and wherein each of the pores has an opening passage.