EXPOSURE DEVICE, METHOD FOR FORMING RESIST PATTERN, AND STORAGE MEDIUM

摘要

[Problem] To provide a technology whereby it is possible to obtain high in-plane uniformity on a wafer (W), and high resolution of the line width of a pattern when forming a resist pattern. [Solution] A resist film is formed on a substrate and a pattern is exposed by means of a pattern exposure machine (C6), after which an entire pattern exposure region is exposed by using a one-shot exposure device (1). When doing so, the exposure amount is adjusted in accordance with the exposure position on the wafer (W) on the basis of information regarding the in-plane distribution of the line width of the resist pattern obtained from an inspection device (861 (862)) in advance. Examples of the means for adjusting the exposure amount include a means for adjusting the exposure amount while moving a band-shaped irradiation region corresponding to the diameter of the wafer (W), and a means for adjusting the exposure amount with regard to each chip by intermittently moving the irradiation region corresponding to a pattern exposure shot region.