Multiple Silicide Integration Structure and Method

摘要

A structure and method for providing a multiple silicide integration is provided. An embodiment comprises forming a first transistor and a second transistor on a substrate. The first transistor is masked and a first silicide region is formed on the second transistor. The second transistor is then masked and a second silicide region is formed on the first transistor, thereby allowing for device specific silicide regions to be formed on the separate devices.

主权项

1. A semiconductor device comprising:
a substrate with a first transistor and a second transistor, the second transistor being a different type of transistor than the first transistor; a first silicide region located on the first transistor, the first silicide region comprising a first material and having a first thickness; and a second silicide region located on an emitter and a first portion of a top surface of a base connection of the second transistor but not on a second portion of the top surface of the base connection, the second silicide region comprising a second material different from the first material and having a second thickness different from the first thickness.