SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A semiconductor device including: a base material portion that includes a semiconductor substrate and an insulating film that is formed on one face of the semiconductor substrate and on which a vertical hole is formed along the thickness direction of the semiconductor substrate; a vertical hole wiring portion that includes a vertical hole electrode formed on a side wall of the base material portion that forms the vertical hole; a metallic film that is formed within the insulating film and that is electrically connected to the vertical hole wiring portion; and a conductive protective film that is formed to be in contact with the metallic film within the insulating film and that is formed in a region that includes a contact region of a probe during a probe test that is performed in the middle of manufacture on a film face of the metallic film.

主权项

1. A semiconductor device comprising:
a base material portion that includes a semiconductor substrate and an insulating film that is formed on one face of the semiconductor substrate and on which a hole is formed along a thickness direction of the semiconductor substrate; a hole wiring portion that includes a hole electrode formed on a side wall of the base material portion that forms the hole; a metallic film that is formed within the insulating film and that is electrically connected to the hole wiring portion; a conductive protective film that is arranged at a position that opposes an opening portion of the hole and formed to be in physical contact with the metallic film within the insulating film, wherein the metallic film is provided on the semiconductor substrate side of the conductive protective film; and wherein a region of the conductive protective film in the vicinity of the outer circumference end portion is covered by the insulating film.