| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A semiconductor device includes a gate structure on a substrate; a raised source/drain region adjacent to the gate structure; and an interconnect plug on the doped region. The raised source/drain region includes a top surface being elevated from a surface of the substrate; and a doped region exposed on the top surface. The doped region includes a dopant concentration greater than any other portions of the raised source/drain region. A bottommost portion of the interconnect plug includes a width approximate to a width of the doped region. |
| 申请公布号 |
US2015206946(A1) |
申请公布日期 |
2015.07.23 |
| 申请号 |
US201414530320 |
申请日期 |
2014.10.31 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
CHEN I-CHIH;TSAI FU-TSUN;LEE YUNG-FA;LIN KO-MIN;HUANG CHIH-MU;WANG YING-LANG |
| 分类号 |
H01L29/417;H01L29/45;H01L21/324;H01L29/78;H01L29/66;H01L29/08;H01L21/285 |
主分类号 |
H01L29/417 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a gate structure on a substrate; a raised source/drain region adjacent to the gate structure, wherein the raised source/drain region comprises:
a top surface being elevated from a surface of the substrate; anda doped region exposed on the top surface, wherein the doped region comprises a dopant concentration greater than any other portions of the raised source/drain region; and an interconnect plug on the doped region, wherein a bottommost portion of the interconnect plug comprises a width approximate to a width of the doped region. |
| 地址 |
HSINCHU TW |
