| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can inhibit variation in on-voltage and characteristic variation in a semiconductor device in which a lifetime killer is formed. <P>SOLUTION: A semiconductor device manufacturing method comprises: an ion injection process of performing ion injection of an impurity composing a collector layer 10 from a rear face of a semiconductor substrate 1a; an activation process of irradiating laser beams from the rear face of the semiconductor substrate 1a to activate the impurity to form the collector layer 10; and a lifetime killer formation process of irradiating laser beams from the rear face of the semiconductor substrate 1a to form a lifetime killer 13. According to the manufacturing method, because the lifetime killer 13 is formed by laser irradiation, a distribution width of the lifetime killer 13 only depends on a wavelength. As a result, variation of the distribution width can be inhibited, and variation in on-voltage and characteristic variation can be inhibited in comparison with a case of forming the lifetime killer 13 by ion irradiation. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
