| 发明名称 | Device with through-silicon via (TSV) and method of forming the same | ||
| 摘要 | A method includes forming an opening extending from a top surface of a silicon substrate into the silicon substrate to a predetermined depth. The method further includes forming an insulation structure on the silicon substrate along the sidewalls and the bottom of the opening and forming a conductive layer on the insulation structure to fill the opening. A first interface between the insulation structure and the silicon substrate has an interface roughness with a peak-to-valley height less than 5 nm, and a second interface between the insulation structure and the conductive layer has an interface roughness with a peak-to-valley height less than 5 nm. | ||
| 申请公布号 | US9087878(B2) | 申请公布日期 | 2015.07.21 |
| 申请号 | US201313960171 | 申请日期 | 2013.08.06 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Yu Chen-Hua;Chiou Wen-Chih;Liao Ebin;Wu Tsang-Jiuh |
| 分类号 | H01L21/44;H01L21/311;H01L21/768;H01L21/48;H01L21/56;H01L23/14;H01L23/31;H01L23/48;H01L25/065;H01L23/498 | 主分类号 | H01L21/44 |
| 代理机构 | Lowe Hauptman & Ham, LLP | 代理人 | Lowe Hauptman & Ham, LLP |
| 主权项 | 1. A method, comprising: forming an opening extending from a top surface of a silicon substrate into the silicon substrate to a predetermined depth; forming an insulation structure on the silicon substrate along the sidewalls and a bottom of the opening; and forming a conductive layer on the insulation structure to fill the opening;wherein a first interface between the insulation structure and the silicon substrate has an interface roughness with a peak-to-valley height less than 5 nm, and a second interface between the insulation structure and the conductive layer has an interface roughness with a peak-to-valley height less than 5 nm. | ||
| 地址 | TW | ||