发明名称 METHOD OF PRETREATING UNDERLAYER AND METHOD OF FABRICATING THIN FILM USING THE SAME
摘要 <p>The present invention relates to a method for pre-treating an underlying layer and a method for fabricating a thin film using the same. The method for pre-treating an underlying layer includes: preparing a substrate with an underlying layer thereon; forming an organic silane compound layer on the underlying layer; and forming a silicon monolayer from the organic silane compound layer by performing an annealing process. The organic silane compound layer includes silicon and at least one material where a carbon atom and a hydrogen atom (C-H) are bonded.</p>
申请公布号 KR20150083639(A) 申请公布日期 2015.07.20
申请号 KR20140003420 申请日期 2014.01.10
申请人 KOOKJE ELECTRIC KOREA CO., LTD. 发明人 LEE, JA HYUK
分类号 H01L21/205 主分类号 H01L21/205
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