发明名称 |
METHOD OF PRETREATING UNDERLAYER AND METHOD OF FABRICATING THIN FILM USING THE SAME |
摘要 |
<p>The present invention relates to a method for pre-treating an underlying layer and a method for fabricating a thin film using the same. The method for pre-treating an underlying layer includes: preparing a substrate with an underlying layer thereon; forming an organic silane compound layer on the underlying layer; and forming a silicon monolayer from the organic silane compound layer by performing an annealing process. The organic silane compound layer includes silicon and at least one material where a carbon atom and a hydrogen atom (C-H) are bonded.</p> |
申请公布号 |
KR20150083639(A) |
申请公布日期 |
2015.07.20 |
申请号 |
KR20140003420 |
申请日期 |
2014.01.10 |
申请人 |
KOOKJE ELECTRIC KOREA CO., LTD. |
发明人 |
LEE, JA HYUK |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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