| 发明名称 |
P-TYPE METAL OXIDE SEMICONDUCTOR MATERIAL AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a p-type metal oxide semiconductor material and a method for fabricating the same.SOLUTION: A P-type metal oxide semiconductor material is provided. The P-type metal oxide semiconductor material has a chemical formula of InGaZnO, wherein 0≤a≤0.1, 0≤b≤0.1 and 0<a+b≤0.16. In particular, the P-type metal oxide semiconductor material has hole carrier concentration of 1×10cmto 5×10cm. |
| 申请公布号 |
JP2015129079(A) |
申请公布日期 |
2015.07.16 |
| 申请号 |
JP20140264487 |
申请日期 |
2014.12.26 |
| 申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
CHIOU SHAN-HAW;CHOU TZU-CHI;HUANG CHIUNG-HUI;HSIEH YU-TZU |
| 分类号 |
C04B35/00;C01G15/00;C04B35/626;C23C14/34 |
主分类号 |
C04B35/00 |
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