| 摘要 |
PROBLEM TO BE SOLVED: To provide a heating apparatus in which a large-sized substrate can be rapidly heated and rapidly cooled with high uniformity, and a heating method using the heating apparatus.SOLUTION: A heat treatment apparatus includes: a first chamber of which one side is opened; a second chamber of which one side is opened; a device for moving the first and second chambers; a heating apparatus; a gas introduction port; a gas exhaust port; and a tool for longitudinally fixing a substrate. In the heat treatment apparatus, the substrate can be rapidly heated while the first and second chambers are connected, and rapidly cooled using a temperature difference from the outside of the chambers while the first and second chambers are separated to move a heat storage portion of the heating apparatus or the like away from the substrate. There are also provided a heating method using the heating apparatus, and a method for manufacturing a semiconductor device using an oxide semiconductor. |
