光半导体装置及其制造方法;OPTICAL-SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

本发明之目的在于提供一种薄型且光萃取效率较高之光半导体装置。本发明之光半导体装置之制造方法之特征在于包括：第1步骤，于支持基板上形成复数个彼此间隔之第1及第2导电构件；第2步骤，于第1及第2导电构件之间设置包含遮光性树脂之基体；第3步骤，使光半导体元件载置于第1及/或第2导电构件上；第4步骤，利用包含透光性树脂之密封构件被覆光半导体元件；以及第5步骤，除去支持基板后，使光半导体装置单片化。又，本发明之光半导体装置之制造方法之特征在于：第1及第2导电构件为镀金属。藉此可形成薄型且光萃取效率高之光半导体装置。;The method for manufacturing a photo-semiconductor device of the present invention includes a first step of forming a plurality of first and second electrically conductive members that are disposed separately from each other on a support substrate; a first step of forming a plurality of first and second electrically conductive members that are disposed separately from each other on a support substrate; a second step of providing a base member formed from a light blocking resin between the first and second electrically conductive members; a third step of mounting a photo-semiconductor element on the first and/or second electrically conductive member; a fourth step of covering the photo-semiconductor element by a sealing member formed from a translucent resin; and a fifth step of obtaining individual photo-semiconductor devices after removing the support substrate. Also, the method for manufacturing a photo-semiconductor device is characterized in that the first and second electrically conductive members are formed by plating. This constitution makes it possible to make the photo-semiconductor device that is lower in profile and has high efficiency of extracting light.