发明名称 |
TRANSISTOR AND METHOD FOR FABRICATING THE SAME |
摘要 |
A method for fabricating a transistor including the following steps is provided. First, a gate electrode is formed on a substrate, and a gate insulating layer is formed on the substrate in sequence, wherein the gate insulating layer covers the substrate and the gate electrode. Next, a patterned channel layer and a hard-mask layer are formed on the gate insulating layer, wherein the patterned channel layer and the hard-mask layer are located above the gate electrode, and the hard-mask layer is disposed on the patterned channel layer. Afterwards, a source and a drain are formed on the gate insulating layer by a wet etchant. The part of the hard-mask layer that is not covered by the source and the drain is removed by the wet etchant until the patterned channel layer is exposed, so as to form a plurality of patterned hard-mask layers. |
申请公布号 |
US2015200281(A1) |
申请公布日期 |
2015.07.16 |
申请号 |
US201414262802 |
申请日期 |
2014.04.27 |
申请人 |
Au Optronics Corporation |
发明人 |
Yang Chao-Shun |
分类号 |
H01L29/66;H01L29/786;H01L21/465 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
1. A method for fabricating a transistor, comprising:
forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode and the substrate to cover the substrate and the gate electrode; forming a patterned channel layer and a hard-mask layer on the gate insulating layer, wherein the patterned channel layer and the hard-mask layer are disposed above the gate electrode, and the hard-mask layer is located on the patterned channel layer; and forming a source and a drain on the gate insulating layer by a wet etchant and removing part of the hard-mask layer that is not covered by the source and the drain by the wet etchant until the patterned channel layer is exposed, so as to form a plurality of patterned hard-mask layers. |
地址 |
Hsinchu TW |