| 摘要 |
PROBLEM TO BE SOLVED: To solve such a problem that, in high NA ArF immersion exposure after a 45 nm technology node, specifically in a microfabrication process such as a contact process, occurrences of variation in contact hole diameters or the like are caused frequently.SOLUTION: In one invention of the present application, a silicon nitride-based insulating film is inserted between a multilayer resist and an insulating film to be processed, in a contact process or the like. As a result, variations in contact hole diameters or the like in a contact process or the like can be reduced. |
