| 发明名称 |
SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
| 摘要 |
Disclosed is a method of manufacturing a semiconductor device including: performing a pre-process to a metal film or a GST film by supplying a first processing gas to a substrate, on a surface of which the metal film or the GST film is formed, without supplying a second processing gas; and performing a formation process to the substrate to which the pre-process has been performed such that a film is formed on the metal film or the GST film by executing at least one cycle of alternately (i) supplying the first processing gas, and (ii) supplying the second processing gas that is activated by plasma excitation. |
| 申请公布号 |
US2015197855(A1) |
申请公布日期 |
2015.07.16 |
| 申请号 |
US201514667692 |
申请日期 |
2015.03.25 |
| 申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
ASAI Masayuki;HONDA Koichi;UMEMOTO Mamoru;OKUDA Kazuyuki |
| 分类号 |
C23C16/52;H01L21/3205;C23C16/455;H01L21/02 |
主分类号 |
C23C16/52 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device comprising:
performing a pre-process to a metal film or a GST film by supplying a first processing gas to a substrate, on a surface of which the metal film or the GST film is formed, without supplying a second processing gas; and performing a formation process to the substrate to which the pre-process has been performed such that a film is formed on the metal film or the GST film by executing at least one cycle of alternately (i) supplying the first processing gas, and (ii) supplying the second processing gas that is activated by plasma excitation. |
| 地址 |
Tokyo JP |
