| 摘要 |
<p>In one aspect, methods of making electroluminescent devices are described herein. A method described herein comprises providing an electroluminescent phase between a first electrode and second electrode, the electroluminescent phase comprising a layer of first polycrystalline matrix and migrating an atomic species in the first polycrystalline matrix by application of an electric field to the first polycrystalline matrix. The migrating atomic species form semiconducting regions in the first polycrystalline matrix, the semiconducting regions constituents of p-n junctions of the electroluminescent phase.</p> |
