| 摘要 |
PURPOSE:To reduce the through-current at switching by providing a voltage drop circuit causing a voltage drop through the current flowing between an input of a CMOS circuit and a gate of an N-channel MOS transistor (TR). CONSTITUTION:The voltage drop circuit Z and a Schottky NPN TR1 are used, an input terminal A is connected to a base of the T1, a gate input C is connected to the emitter and ground via a current limit resistor R to constitute the titled circuit. A proper current flows through a GND 2 through the voltage drop circuit Z and the current limit resistor R and a gate input voltage VC is always decreased from the input voltage VA by a base-emitter potential difference VBE. The through-current flowing from a VCC 1 to the GND 2 is maximum when an output voltage VE is VCC/2, but it is reduced by decreasing the potential difference between the gate and source of TRs P1, N1. |
