| 发明名称 | Method to define multiple layer patterns with a single exposure by E-beam lithography | ||
| 摘要 | The present disclosure provides a method that includes forming a first resist layer on a substrate; forming a second resist layer over the first resist layer; and performing an electron-beam (e-beam) lithography exposure process to the first resist layer and the second resist layer, thereby forming a first latent feature in the first resist layer and a second latent feature in the second resist layer. | ||
| 申请公布号 | US9081312(B2) | 申请公布日期 | 2015.07.14 |
| 申请号 | US201314030875 | 申请日期 | 2013.09.18 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Lu Yen-Cheng;Shih Chih-Tsung;Yu Shinn-Sheng;Chen Jeng-Horng;Yen Anthony |
| 分类号 | G03F1/78;G03F7/20;G03F7/36;H01L21/027;H01L21/311 | 主分类号 | G03F1/78 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A method, comprising: forming a first resist layer on a substrate; forming a second resist layer over the first resist layer; and performing an electron-beam (e-beam) lithography exposure process to the first resist layer and the second resist layer, thereby forming a first latent feature in the first resist layer and a second latent feature in the second resist layer. | ||
| 地址 | Hsin-Chu TW | ||