发明名称 |
Wave plate, method for producing same, and liquid crystal display device |
摘要 |
A phase difference plate is manufactured by a method including a step of forming a multilayer body by co-extruding or co-casting a resin A having a positive intrinsic birefringence value and a resin B having a negative intrinsic birefringence value, the multilayer body including a layer “a” containing the resin A and a layer “b” containing the resin B; a step of stretching the multilayer body at a temperature T1 in one direction; and a step of subsequently stretching the multilayer body at temperature T2 lower than the temperature T1 in a direction that is approximately orthogonal to the previous stretching direction. The resulting phase difference plate has specific in-plane retardation Rea of the layer “a”, retardation Rta in the thickness direction thereof, in-plane retardation Reb of the layer “b”, and retardation Rtb in the thickness direction thereof. |
申请公布号 |
US9079350(B2) |
申请公布日期 |
2015.07.14 |
申请号 |
US201013389967 |
申请日期 |
2010.07.28 |
申请人 |
ZEON CORPORATION |
发明人 |
Hatano Taku;Harai Kenichi |
分类号 |
G02F1/1335;B29C55/02;B29C55/14;G02B5/30;G02F1/13363 |
主分类号 |
G02F1/1335 |
代理机构 |
Birch, Stewart, Kolasch & Birch, LLP |
代理人 |
Birch, Stewart, Kolasch & Birch, LLP |
主权项 |
1. A method for manufacturing a phase difference plate, comprising:
a step of co-extruding or co-casting a resin A having a positive intrinsic birefringence value and a resin B having a negative intrinsic birefringence value, to form a multilayer body including a layer “a” containing the resin A and a layer “b” containing the resin B; a first stretching step of stretching the multilayer body at a temperature T1 in one direction; and a second stretching step of stretching, after the first stretching step, the multilayer body at a temperature T2 that is lower than the temperature T1 in another direction that is approximately orthogonal to the aforementioned stretching direction to obtain the phase difference plate, wherein: the phase difference plate satisfies Equation 1 to Equation 4:
0 nm<Rea<50 nm Equation 150 nm<Rta<100 nm Equation 2100 nm<Reb<150 nm Equation 3100 nm<Rtb<−40 nm Equation 4 wherein Rea is an in-plane retardation of the stretched layer “a”, Rta is a retardation in a thickness direction of the stretched layer “a”, Reb is an in-plane retardation of the stretched layer “b”, and Rtb is a retardation in a thickness direction of the stretched layer “b”. |
地址 |
Tokyo JP |