发明名称 Wave plate, method for producing same, and liquid crystal display device
摘要 A phase difference plate is manufactured by a method including a step of forming a multilayer body by co-extruding or co-casting a resin A having a positive intrinsic birefringence value and a resin B having a negative intrinsic birefringence value, the multilayer body including a layer “a” containing the resin A and a layer “b” containing the resin B; a step of stretching the multilayer body at a temperature T1 in one direction; and a step of subsequently stretching the multilayer body at temperature T2 lower than the temperature T1 in a direction that is approximately orthogonal to the previous stretching direction. The resulting phase difference plate has specific in-plane retardation Rea of the layer “a”, retardation Rta in the thickness direction thereof, in-plane retardation Reb of the layer “b”, and retardation Rtb in the thickness direction thereof.
申请公布号 US9079350(B2) 申请公布日期 2015.07.14
申请号 US201013389967 申请日期 2010.07.28
申请人 ZEON CORPORATION 发明人 Hatano Taku;Harai Kenichi
分类号 G02F1/1335;B29C55/02;B29C55/14;G02B5/30;G02F1/13363 主分类号 G02F1/1335
代理机构 Birch, Stewart, Kolasch & Birch, LLP 代理人 Birch, Stewart, Kolasch & Birch, LLP
主权项 1. A method for manufacturing a phase difference plate, comprising: a step of co-extruding or co-casting a resin A having a positive intrinsic birefringence value and a resin B having a negative intrinsic birefringence value, to form a multilayer body including a layer “a” containing the resin A and a layer “b” containing the resin B; a first stretching step of stretching the multilayer body at a temperature T1 in one direction; and a second stretching step of stretching, after the first stretching step, the multilayer body at a temperature T2 that is lower than the temperature T1 in another direction that is approximately orthogonal to the aforementioned stretching direction to obtain the phase difference plate, wherein: the phase difference plate satisfies Equation 1 to Equation 4: 0 nm<Rea<50 nm  Equation 150 nm<Rta<100 nm  Equation 2100 nm<Reb<150 nm  Equation 3100 nm<Rtb<−40 nm  Equation 4 wherein Rea is an in-plane retardation of the stretched layer “a”, Rta is a retardation in a thickness direction of the stretched layer “a”, Reb is an in-plane retardation of the stretched layer “b”, and Rtb is a retardation in a thickness direction of the stretched layer “b”.
地址 Tokyo JP
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