Semiconductor device and manufacturing method thereof

摘要

In a semiconductor device including an oxide semiconductor layer, a conductive layer is formed in contact with a lower portion of the oxide semiconductor layer and treatment for adding an impurity is performed, so that a channel formation region and a pair of low-resistance regions between which the channel formation region is sandwiched are formed in the oxide semiconductor layer in a self-aligned manner. Wiring layers electrically connected to the conductive layer and the low-resistance regions are provided in openings of an insulating layer.

主权项

1. A semiconductor device comprising:
a first conductive layer; a first insulating layer whose side surface is in contact with a side surface of the first conductive layer; an oxide semiconductor layer over and in contact with the first conductive layer and the first insulating layer; a gate insulating layer over the oxide semiconductor layer; a gate electrode layer over the oxide semiconductor layer with the gate insulating layer interposed therebetween; a second insulating layer over the gate electrode layer; a first wiring layer over the second insulating layer, the first wiring layer being in contact with the first conductive layer through a first opening of the second insulating layer; a second wiring layer over the second insulating layer, the second wiring layer being in contact with the oxide semiconductor layer through a second opening of the second insulating layer; and a third wiring layer over the second insulating layer, the third wiring layer electrically connected to the oxide semiconductor layer through a third opening of the second insulating layer, wherein one surface of the oxide semiconductor layer is directly in contact with the first conductive layer.