Method for sheet resistance and leakage current density measurements on shallow semiconductor implants

摘要

A method for accurately determining the sheet resistance and leakage current density of a shallow implant in a semiconductor substrate surface includes making one or more four-point resistance measurements with an induced current below 100 μA on the semiconductor surface with a plurality of electrode spacing sets, at least one set defining an electrode separation distance less than 100 μm. The sheet resistance and implant leakage are determined through fitting the measured data to theoretical data to within a predetermined error margin.

主权项

1. A method for determining at least one electrical property of a shallow implant in the surface of a semiconductor substrate, the method comprising the steps of:
providing a multi-point probe having at least four electrically conductive electrodes, each two of said electrodes being separated from each other by an electrode spacing, wherein at least one of the electrode spacings is less than 100 μm; positioning said electrodes of said multi-point probe in contact with an area of said shallow implant; performing a four point resistance measurement by inducing a current of less than 100 μA in said area via said multi-point probe; and extracting at least one electrical property of the shallow implant based on a mathematical relation between said four-point resistance measurement and the electrode spacing between each two of said electrically conductive electrodes.