SILICA GLASS CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a silica glass crucible which can prevent occurrence of void defects caused by including bubbles of SiO gas into a silicon single crystal being pulled.

SOLUTION: This silica glass crucible 10 has a double-layer structure including an outer layer of a first natural silica glass layer 11 and an inner layer of a synthetic silica glass layer 12, and further a second natural silica glass layer 13 is formed on the inner surface of the bottom part 10B of the crucible, namely, the bottom part 10B of the crucible is a three-layer structure while the wall part 10A and the curved part 10C are the double-layer structure. The second natural silica glass layer 13 is a layer formed only inner surface of the bottom part of the silica glass crucible 10, and whose Ca concentration is 0.5 ppm or less. Flaws formed on the inner surface of the second natural silica glass layer 13 disappear promptly associated with fusion of the second natural silica glass layer 13, so that generation of SiO gas can be suppressed.

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