| 摘要 |
Provided is a method of filling a recessed unit of an object to be processed. The object to be processed has a semiconductor substrate and an insulating film formed on the semiconductor substrate. The method comprises: a process of forming a first semiconductor layer where foreign matters are doped along a wall side for dividing and forming the recessed unit; a process of forming a second semiconductor layer having a low foreign matter concentration and a small film thickness than the first semiconductor layer on the first semiconductor layer; a process of annealing the object to be processed; and a process of etching a first second amorphous semiconductor area included in the first semiconductor layer and a second amorphous semiconductor area included in the second semiconductor layer. According to the present invention, the generation of a cavity can be suppressed in the filling of the recessed unit. |
