发明名称 Systems and methods for producing low work function electrodes
摘要 According to an exemplary embodiment of the invention, systems and methods are provided for producing low work function electrodes. According to an exemplary embodiment, a method is provided for reducing a work function of an electrode. The method includes applying, to at least a portion of the electrode, a solution comprising a Lewis basic oligomer or polymer; and based at least in part on applying the solution, forming an ultra-thin layer on a surface of the electrode, wherein the ultra-thin layer reduces the work function associated with the electrode by greater than 0.5 eV. According to another exemplary embodiment of the invention, a device is provided. The device includes a semiconductor; at least one electrode disposed adjacent to the semiconductor and configured to transport electrons in or out of the semiconductor.
申请公布号 US9076768(B2) 申请公布日期 2015.07.07
申请号 US201214117965 申请日期 2012.05.16
申请人 GEORGIA TECH RESEARCH CORPORATION;THE TRUSTEES OF PRINCETON UNIVERSITY 发明人 Kippelen Bernard;Fuentes-Hernandez Canek;Zhou Yinhua;Kahn Antoine;Meyer Jens;Shim Jae Won;Marder Seth R.
分类号 H01L21/441;H01L51/00;H01L29/45;H01L51/52;H01B1/24;H01L51/50;H01L21/283;H01L51/10;H01L51/44 主分类号 H01L21/441
代理机构 Troutman Sanders LLP 代理人 Troutman Sanders LLP ;Schnider Ryan A.;Jones Mark Lehi
主权项 1. A method for reducing a work function of an electrode, the method comprising: applying, to at least a portion of a conductive polymer electrode, a solution comprising a Lewis basic oligomer or polymer; and based at least in part on applying the solution, forming an ultra-thin layer on a surface of the electrode, wherein the ultra-thin layer reduces the work function associated with the electrode by greater than 1.0 eV, and wherein forming the ultra-thin layer comprises forming, on the electrode, an insulating layer having a thickness less than 50 nm.
地址 Atlanta GA US