发明名称 SUBSTRATE PROCESSING APPARATUS, SHUTTER DEVICE AND PLASMA PROCESSING APPARATUS
摘要 <p>An abnormal discharge is suppressed in a chamber. A plasma processing apparatus (1) includes: a cylindrical chamber (10) which has an opening part (51) to input a substrate to be processed; a deposit shield (71) which is arranged along the inner wall of the chamber (10) and has an opening part (71a) in a position corresponding to the opening part (51); and a shutter (55) which is formed in a plate shape and opens or closes the opening part (71a). When the shutter (55) closes the opening part (71a), the outer circumference of the shutter (55) overlaps the deposit shield (71) in the thickness direction of the shutter (55). The inner circumference of the opening part (71a) overlaps the shutter (55) in the thickness direction of the shutter (55).</p>
申请公布号 KR20150077347(A) 申请公布日期 2015.07.07
申请号 KR20140187933 申请日期 2014.12.24
申请人 TOKYO ELECTRON LIMITED 发明人 ISHIDA TOSHIFUMI
分类号 H01L21/3065;H01L21/02 主分类号 H01L21/3065
代理机构 代理人
主权项
地址