Semiconductor device having high-K gate insulation films including lanthanum

摘要

A semiconductor device having high-k gate insulation films and a method of fabricating the semiconductor device are provided. The semiconductor device includes a first gate insulation film on a substrate and the first gate insulation film includes a material selected from the group consisting of HfO2, ZrO2, Ta2O5, TiO2, SrTiO3 and (Ba,Sr)TiO3, and lanthanum (La). Additionally, the semiconductor device includes a first barrier film on the first gate insulation film, a first gate electrode on the first barrier film, and n-type source/drain regions in the substrate at both sides of the first gate electrode.

主权项

1. A semiconductor device comprising:
a first gate insulation film on a substrate, the first gate insulation film including a first material selected from the group consisting of HfO2, ZrO2, Ta2O5, TiO2, SrTiO3 and (Ba,Sr)TiO3; a first barrier film on the first gate insulation film, the first barrier film including a second material selected from the group consisting of HfON, HfSiON, ZrON and ZrSiON; a first gate electrode on the first barrier film; n-type source/drain regions in the substrate at both sides of the first gate electrode; a second gate insulation film on the substrate, the second gate insulation film including a third material selected from the group consisting of HfO2, ZrO2, Ta2O5, TiO2, SrTiO3 and (Ba,Sr)TiO3; a second barrier film on the second gate insulation film, the second barrier film including a fourth material selected from the group consisting of HfON, HfSiON, ZrON and ZrSiON; a second gate electrode on the second barrier film; and p-type source/drain regions in the substrate at both sides of the second gate electrode, wherein lanthanum (La) is included in the first gate insulation film and the first barrier film is free of La.