| 发明名称 |
SEMICONDUCTOR PHOTODETECTOR ELEMENT AND METHOD |
| 摘要 |
A semiconductor photodetector element includes a semiconductor substrate having a first conductivity type; a columnar structure formed on a first surface of the semiconductor substrate, the columnar structure being composed of a semiconductor of the first conductivity type; a light absorption layer formed so as to surround the columnar structure; and a semiconductor layer formed so as to surround the light absorption layer. |
| 申请公布号 |
US2015187972(A1) |
申请公布日期 |
2015.07.02 |
| 申请号 |
US201514657328 |
申请日期 |
2015.03.13 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
Kawaguchi Kenichi;Yasuoka Nami;YAMASHITA Hiroyasu;NAKATA Yoshiaki |
| 分类号 |
H01L31/0352;H01L31/0232;H01L31/18;H01L31/105 |
主分类号 |
H01L31/0352 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor photodetector element comprising:
a semiconductor substrate having a first conductivity type; a columnar structure formed on a first surface of the semiconductor substrate, the columnar structure being composed of a semiconductor of the first conductivity type; a light absorption layer formed so as to surround the columnar structure; and a semiconductor layer formed so as to surround the light absorption layer. |
| 地址 |
Kawasaki-shi JP |
