| 发明名称 |
METHOD FOR FORMING TUNGSTEN SULFIDE LAYER AND APPARATUS FOR FORMING TUNGSTEN SULFIDE LAYER |
| 摘要 |
Provided are an apparatus and method for forming a tungsten sulfide layer. The method for forming a tungsten sulfide layer by using atomic layer deposition includes reacting a precursor including a gaseous tungsten chloride and a reactant including hydrogen sulfide to form a tungsten sulfide layer on a substrate. |
| 申请公布号 |
US2015184297(A1) |
申请公布日期 |
2015.07.02 |
| 申请号 |
US201514588769 |
申请日期 |
2015.01.02 |
| 申请人 |
Industry-Academic Cooperation Foundation, Yonsei University |
发明人 |
KIM Hyungjun;LEE Won Seon;Park Jusang |
| 分类号 |
C23C16/455;C23C16/46;C01G41/00 |
主分类号 |
C23C16/455 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a tungsten sulfide layer by atomic layer deposition, the method comprising:
reacting a precursor comprising a gaseous tungsten chloride and a reactant comprising hydrogen sulfide to form a tungsten sulfide layer on a substrate. |
| 地址 |
Seoul KR |
