摘要 |
<p>The objective of the present invention is to provide a film-forming device capable of stabilizing the plasma film formation process and reducing the possibility of producing an abnormal discharge. The present invention is provided with: a microwave supply unit for supplying microwaves so as to generate plasma along the processing surface of a workpiece; a negative voltage application unit whereby a negative bias voltage for enlarging a sheath layer along the processing surface is applied to the workpiece; a microwave supply port through which the microwaves are caused to propagate to the enlarged sheath layer; and a center conductor for a waveguide whereby the microwaves supplied from the microwave supply unit are transmitted, the center conductor being disposed in the microwave supply port on the side opposite from a recessed part formed in the microwave supply opening, as viewed in the depth direction of the recessed part. The area (S1) of a first surface of the center conductor and the area (S2) of a second surface of a jig for supporting the workpiece have the relationship of formula (15), the first and second surfaces facing each other in the depth direction of the recessed part.</p> |