发明名称 Semiconductor Devices and Methods of Manufacture Thereof
摘要 Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first semiconductor chip including a first substrate and a first conductive feature formed over the first substrate, and a second semiconductor chip bonded to the first semiconductor chip. The second semiconductor chip includes a second substrate and a second conductive feature formed over the second substrate. A conductive plug is disposed through the first conductive feature and is coupled to the second conductive feature. The conductive plug includes a first portion disposed over the first conductive feature, the first portion having a first width, and a second portion disposed beneath or within the first conductive feature. The second portion has a second width. The first width is greater than the second width.
申请公布号 US2015187701(A1) 申请公布日期 2015.07.02
申请号 US201314141000 申请日期 2013.12.26
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Tsai Shu-Ting;Yaung Dun-Nian;Liu Jen-Cheng;Chen Szu-Ying;Chen U-Ting
分类号 H01L23/538;H01L25/00;H01L25/065 主分类号 H01L23/538
代理机构 代理人
主权项 1. A semiconductor device, comprising: a first semiconductor chip including a first substrate and a first conductive feature formed over the first substrate; a second semiconductor chip bonded to the first semiconductor chip, the second semiconductor chip including a second substrate and a second conductive feature formed over the second substrate; and a conductive plug disposed through the first conductive feature and coupled to the second conductive feature, wherein the conductive plug comprises: a first portion disposed over the first conductive feature, the first portion comprising a first width; anda second portion disposed beneath or within the first conductive feature, the second portion comprising a second width, wherein the first width is greater than the second width, and wherein the first conductive feature comprises a hard mask for a formation of the second portion of the conductive plug.
地址 Hsin-Chu TW