发明名称 |
Semiconductor Devices and Methods of Manufacture Thereof |
摘要 |
Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first semiconductor chip including a first substrate and a first conductive feature formed over the first substrate, and a second semiconductor chip bonded to the first semiconductor chip. The second semiconductor chip includes a second substrate and a second conductive feature formed over the second substrate. A conductive plug is disposed through the first conductive feature and is coupled to the second conductive feature. The conductive plug includes a first portion disposed over the first conductive feature, the first portion having a first width, and a second portion disposed beneath or within the first conductive feature. The second portion has a second width. The first width is greater than the second width. |
申请公布号 |
US2015187701(A1) |
申请公布日期 |
2015.07.02 |
申请号 |
US201314141000 |
申请日期 |
2013.12.26 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Tsai Shu-Ting;Yaung Dun-Nian;Liu Jen-Cheng;Chen Szu-Ying;Chen U-Ting |
分类号 |
H01L23/538;H01L25/00;H01L25/065 |
主分类号 |
H01L23/538 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
a first semiconductor chip including a first substrate and a first conductive feature formed over the first substrate; a second semiconductor chip bonded to the first semiconductor chip, the second semiconductor chip including a second substrate and a second conductive feature formed over the second substrate; and a conductive plug disposed through the first conductive feature and coupled to the second conductive feature, wherein the conductive plug comprises:
a first portion disposed over the first conductive feature, the first portion comprising a first width; anda second portion disposed beneath or within the first conductive feature, the second portion comprising a second width, wherein the first width is greater than the second width, and wherein the first conductive feature comprises a hard mask for a formation of the second portion of the conductive plug. |
地址 |
Hsin-Chu TW |