PLASMA PROCESSING METHOD AND PLASMA PROCESSING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a plasma processing method by which plasma can be securely maintained.SOLUTION: A plasma processing method used by a plasma processing device 10 that generates plasma P between an upper electrode 14 to which a VF power source 16 is connected and a susceptor 12 arranged opposite the upper electrode 14 and subjects a wafer W to plasma processing by the plasma P, includes: providing an auxiliary circuit 17 that decreases the difference between the reflection minimum frequency Fof a first path Lin which high frequency current generated from the VF power source 16 prior to ignition of plasma P and the reflection minimum frequency Fof a second path Lin which high frequency current generated from the VF power source 16 after the ignition of the plasma P; then igniting the plasma P; and maintaining the plasma P.