| 发明名称 |
A SEMICONDUCTOR DEVICE COMPRISING A SURFACE PORTION IMPLANTED WITH NITROGEN AND FLUORINE |
| 摘要 |
A method of fabricating a semiconductor device is provided. A substrate is provided. Thereafter, a dielectric layer is formed on the substrate, wherein the dielectric layer includes a first portion adjacent to the substrate and a second portion adjacent to the first portion. Afterwards, the dielectric layer is treated with nitrogen trifluoride (NF3) to remove the second portion of the dielectric layer and therefore expose the first portion of the dielectric layer. A semiconductor device is also provided. |
| 申请公布号 |
US2015187595(A1) |
申请公布日期 |
2015.07.02 |
| 申请号 |
US201314141391 |
申请日期 |
2013.12.26 |
| 申请人 |
MACRONIX International Co., Ltd. |
发明人 |
Chiu Chien-Lan;Hung Yung-Tai;Su Chin-Ta |
| 分类号 |
H01L21/3105;H01L23/29;H01L21/02 |
主分类号 |
H01L21/3105 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a semiconductor device, comprising:
providing a substrate; forming a dielectric layer on the substrate, wherein the dielectric layer comprises a first portion adjacent to the substrate and a second portion adjacent to the first portion; and treating the dielectric layer with nitrogen trifluoride (NF3) to remove the second portion of the dielectric layer and therefore expose the first portion of the dielectric layer. |
| 地址 |
Hsinchu TW |
