SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

摘要

This semiconductor device (100) includes: a gate electrode (12) formed on a substrate (10); a gate insulating layer (20) formed over the gate electrode; an oxide semiconductor layer (18) formed on the gate insulating layer; source and drain electrodes (14, 16) connected to the oxide semiconductor layer; and an insulating layer (22) formed over the source and drain electrodes. The insulating layer includes a silicon nitride layer (22a) which contacts with at least a part of the upper surface of the source and drain electrodes and of which the thickness is greater than 0 nm and equal to or smaller than 30 nm, and a silicon oxide layer (22b) which has been formed on the silicon nitride layer and which has a thickness of more than 30 nm.

主权项

1. A semiconductor device comprising:
a substrate; a gate electrode formed on the substrate; a gate insulating layer formed over the gate electrode; an oxide semiconductor layer formed on the gate insulating layer; source and drain electrodes electrically connected to the oxide semiconductor layer; and an insulating layer formed over the source and drain electrodes, wherein the insulating layer includes a silicon nitride layer which contacts with at least a part of the upper surface of the source and drain electrodes and of which the thickness is greater than 0 nm and equal to or smaller than 30 nm, and a silicon oxide layer which is formed on the silicon nitride layer and of which the thickness is greater than 30 nm.