| 发明名称 |
Gap Filling Materials and Methods |
| 摘要 |
In accordance with an embodiment a bottom anti-reflective layer comprises a surface energy modification group which modifies the surface energy of the polymer resin to more closely match a surface energy of an underlying material in order to help fill gaps between structures. The surface energy of the polymer resin may be modified by either using a surface energy modifying group or else by using an inorganic structure. |
| 申请公布号 |
US2015187565(A1) |
申请公布日期 |
2015.07.02 |
| 申请号 |
US201414457902 |
申请日期 |
2014.08.12 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Su Yu-Chung;Chang Ching-Yu |
| 分类号 |
H01L21/027;H01L21/02 |
主分类号 |
H01L21/027 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising placing a bottom anti-reflective coating layer onto a substrate, wherein the bottom anti-reflective coating layer comprises a surface energy modification monomer. |
| 地址 |
Hsin-Chu TW |
