发明名称 SEMICONDUCTOR ELEMENT
摘要 A drain drift portion is a first parallel p-n structure, largely corresponding to a portion directly below a p-type base region forming an active region, formed by first n-type regions and first p-type regions being alternately and repeatedly joined. The periphery of the drain drift portion is an edge termination region formed of a second parallel p-n structure aligned contiguously to the first parallel p-n structure and formed by second n-type regions and second p-type regions being alternately and repeatedly joined. An n-type buffer layer is provided between the first and second parallel p-n structures and an n+ type drain layer. A p+ type drain region is selectively provided inside the n+ type drain layer in the edge termination region, penetrating the n+ type drain layer in the depth direction.
申请公布号 US2015187930(A1) 申请公布日期 2015.07.02
申请号 US201514643651 申请日期 2015.03.10
申请人 FUJI ELECTRIC CO., LTD. 发明人 ONISHI Yasuhiko
分类号 H01L29/78 主分类号 H01L29/78
代理机构 代理人
主权项 1. A semiconductor device having an active region, existing on a first main side of a substrate, that causes current to flow actively or passively, a first conductivity type low resistance layer that exists in a surface layer on a second main surface side of the substrate, and a vertical drift portion, interposed between the active region and the first conductivity type low resistance layer, through which a drift current flows in a vertical direction in an on-state and which depletes in an off-state, wherein the vertical drift portion forms a first parallel p-n structure formed by first vertical first conductivity type regions oriented in the thickness direction of the substrate and first vertical second conductivity type regions oriented in the thickness direction of the substrate being alternately and repeatedly joined, the semiconductor device comprising: an edge termination region, interposed between the first main surface and first conductivity type low resistance layer on the periphery of the vertical drift portion, that is largely a non-current path region in an on-state and depletes in an off-state; a first conductivity type layer, provided from the active region to the edge termination region between the first parallel p-n structure and first conductivity type low resistance layer, that has resistance higher than that of the first conductivity type low resistance layer; a second conductivity type low resistance layer selectively provided in a surface layer on the second main surface side in the edge termination region; and an electrode in contact with the first conductivity type low resistance layer and second conductivity type low resistance layer.
地址 Kawasaki-shi JP