SEMICONDUCTOR DEVICE INCLUDING GATE ELECTRODE PROVIDED OVER ACTIVE REGION IN P-TYPE NITRIDE SEMICONDUCTOR LAYER AND METHOD OF MANUFACTURING THE SAME, AND POWER SUPPLY APPARATUS

摘要

A semiconductor device includes a nitride semiconductor stacked structure including a carrier transit layer and a carrier supply layer; a p-type nitride semiconductor layer provided over the nitride semiconductor stacked structure and including an active region and an inactive region; an n-type nitride semiconductor layer provided on the inactive region in the p-type nitride semiconductor layer; and a gate electrode provided over the active region in the p-type nitride semiconductor layer.

主权项

1. A method of forming a semiconductor device comprising:
forming a stage mounting a semiconductor chip, the forming comprising:
providing a nitride semiconductor stacked structure comprising a carrier transit layer and a carrier supply layer;providing a p-type nitride semiconductor layer over the nitride semiconductor stacked structure, the p-type nitride semiconductor layer comprising an active region and an inactive region;providing an n-type nitride semiconductor layer on the inactive region in the p-type nitride semiconductor layer; andproviding a gate electrode over the active region in the p-type nitride semiconductor layer; wherein the method further comprises connecting a gate lead to the gate pad in the semiconductor chip; connecting a source lead to the source pad in the semiconductor chip; connecting a drain lead to the drain pad in the semiconductor chip; and providing an encapsulation resin; wherein the n-type nitride semiconductor layer is depleted, causing it to have fixed positive charges, and the fixed positive charges in the n-type nitride semiconductor layer cause a conduction band energy level at an interface between the carrier transit layer and the carrier supply layer to be comparable to that in a similar structure which lacks the p-type nitride semiconductor layer and the n-type nitride semiconductor layer.