| 发明名称 |
POWER SEMICONDUCTOR DEVICE |
| 摘要 |
A power semiconductor device may include: a first conductivity-type first semiconductor region; a second conductivity-type second semiconductor region disposed above the first semiconductor region; a trench gate penetrating through the second semiconductor region and a portion of the first semiconductor region; a third semiconductor region disposed on both sides of the trench gate and disposed on an inner side of an upper portion of the second semiconductor region; and a device protective region disposed in the third semiconductor region. |
| 申请公布号 |
US2015187920(A1) |
申请公布日期 |
2015.07.02 |
| 申请号 |
US201414271075 |
申请日期 |
2014.05.06 |
| 申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
PARK Jae Hoon;KIM Ji Hye;MO Kyu Hyun;OH Ji Yeon;SEO Dong Soo |
| 分类号 |
H01L29/739;H01L29/10;H01L29/06 |
主分类号 |
H01L29/739 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A power semiconductor device comprising:
a first conductivity-type first semiconductor region; a second conductivity-type second semiconductor region disposed above the first semiconductor region; a trench gate penetrating through the second semiconductor region and a portion of the first semiconductor region; a third semiconductor region disposed on both sides of the trench gate and disposed on an inner side of an upper portion of the second semiconductor region; and a device protective region disposed in the third semiconductor region. |
| 地址 |
Suwon-Si KR |
