| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To increase the etching rate by increasing the utilization efficiency of reaction gas for etching silicon, or the like. <P>SOLUTION: A workpiece 9 is transported in the order of a carry-in side exhaust chamber 20, a processing chamber 10, and a carry-out side exhaust chamber 30. Reaction gas is introduced into the processing chamber 10. Gas in the exhaust chambers 20, 30 is sucked and exhausted by an exhaust means 5, so that the internal pressure of the exhaust chambers 20, 30 will be lower than the external pressure, and the internal pressure of the processing chamber 10. Preferably, the flow rate of gas flow in communication ports 13, 14 is 0.3-0.7 m/sec. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
