| 摘要 |
<p>The present invention relates to a method for manufacturing a semiconductor light emitting device which includes the steps of: forming a plurality of semiconductor layers which include a first semiconductor layer with a first conductivity, a second semiconductor layer with a second conductivity which is different from the first conductivity and an active layer which is interposed between the first semiconductor layer and the second semiconductor layer and generates light by the recombination of an electron and a hole on a substrate; forming an electrode which is electrically connected to the first semiconductor layer or the second semiconductor layer; forming a nonconductive layer which covers the electrode, is located to face the semiconductor layers, and reflects the light from the active layer; forming an opening part to expose the electrode by a first etching process as forming the opening part for an electrical connection path with the electrode on the nonconductive layer; removing a material formed on the upper side of the electrode which is exposed to the opening part by the first etching process by a second etching process; and forming an electrical connection in contact with the electrode without the material on the opening part.</p> |
