发明名称 Semiconductor memory devices and semiconductor packages
摘要 A semiconductor memory device includes a semiconductor die and an input-output bump pad part. The semiconductor die includes a plurality of memory cell arrays. The input-output bump pad part is formed in a central region of the semiconductor die. The input-output bump pad part provides a plurality of channels for connecting each of the memory cell arrays independently to an external device. The semiconductor memory device may adopt the multi-channel interface, thereby having high performance with relatively low power consumption.
申请公布号 US9070569(B2) 申请公布日期 2015.06.30
申请号 US201414450359 申请日期 2014.08.04
申请人 Samsung Electronics Co., Ltd. 发明人 Lee Ho-Cheol;Oh Chi-Sung;Kim Jin-Kuk
分类号 H01L25/065;G11C5/02;G11C5/06;H01L21/66;H01L23/00;H01L27/02;H01L27/108 主分类号 H01L25/065
代理机构 Volentine & Whitt, PLLC 代理人 Volentine & Whitt, PLLC
主权项 1. A semiconductor memory device comprising: a plurality of semiconductor dies that are stacked, each semiconductor die including a plurality of memory cell arrays; and a plurality of input-output bump pad parts respectively located at a central region of each semiconductor die, the input-output bump pad parts providing a plurality of channels each dedicated to only a respective one of the memory cell arrays and by which each of the memory cell arrays can be connected independently of each other to one or more external devices, wherein each of the input-output bump pad parts includes a plurality of channel bump pad parts associated with the memory cell arrays, respectively, each of the channel bump pad parts includes a plurality of bump pads that are arranged in a matrix of rows and columns, and the bump pads of each of the channel bump parts include power bump pads dedicated to receive power supply voltages.
地址 Suwon-si, Gyeonggi-do KR