| 发明名称 |
Memory elements and methods with improved data retention and/or endurance |
| 摘要 |
A method can include forming at least one memory layer over a first electrode, the memory layer having at least one element formed therein that oxidizes in the presence of an electric field to form conductive paths within the memory layer; and forming an inhibiting layer within the memory layer that increases an oxidation energy for the at least one element, as compared to the oxidation energy for the at least one element in the memory layer without the inhibiting layer. |
| 申请公布号 |
US9070877(B2) |
申请公布日期 |
2015.06.30 |
| 申请号 |
US201313972718 |
申请日期 |
2013.08.21 |
| 申请人 |
Adesto Technologies Corporation |
发明人 |
Gallo Antonio R. |
| 分类号 |
H01L21/00;H01L45/00;G11C13/00 |
主分类号 |
H01L21/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
forming at least one memory layer over a first electrode, the memory layer having at least one element formed therein that oxidizes in the presence of an electric field to form conductive paths within the memory layer; and forming an inhibiting layer within the memory layer that increases an oxidation energy for the at least one element, as compared to the oxidation energy for the at least one element in the memory layer without the inhibiting layer. |
| 地址 |
Sunnyvale CA US |
