| 发明名称 | Nitride semiconductor wafer for a high-electron-mobility transistor and its use | ||
| 摘要 | A nitride semiconductor wafer includes a substrate, and a buffer layer formed on the substrate and including an alternating layer of AlxGa1-xN (0≦x≦0.05) and AlyGa1-yN (0<y≦1 and x<y) layers. Only the AlyGa1-yN layer in the alternating layer is doped with an acceptor. | ||
| 申请公布号 | US9070619(B2) | 申请公布日期 | 2015.06.30 |
| 申请号 | US201313962812 | 申请日期 | 2013.08.08 |
| 申请人 | HITACHI METALS, LTD. | 发明人 | Tsuchiya Tadayoshi |
| 分类号 | H01L29/66;H01L29/205;H01L21/02;H01L29/778;H01L29/10;H01L29/20;H01L29/207 | 主分类号 | H01L29/66 |
| 代理机构 | McGinn IP Law Group, PLLC | 代理人 | McGinn IP Law Group, PLLC |
| 主权项 | 1. A high-electron-mobility transistor nitride semiconductor wafer, comprising: a substrate; a buffer layer formed on the substrate and comprising an alternating layer of an AlxGa1-xN (0≦x≦0.05) layer and an AlyGa1-yN (0<y≦1 and x<y) layer; a nitride semiconductor channel layer formed on the buffer layer; and a nitride semiconductor barrier layer formed on the channel layer, wherein only the AlyGa1-yN layer of the alternating layer is doped with an acceptor. | ||
| 地址 | Tokyo JP | ||